copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 1 /5 samwin features high ruggedness r ds( on ) (max 9 ? )@v gs =10v gate charge (typical 5.6 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. this power mosfet is usually used at ac adaptors and smps. n - channel d - pak/i - pak/to - 92 mosfet absolute maximum ratings symbol parameter value unit to - 92 to - 251 to - 252 v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 0.8 1.0 * a continuous drain current (@t c =100 o c) 0.5 0.65 * a i dm drain current pulsed (note 1) 2.0 4.0 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 40 mj e ar repetitive avalanche energy (note 1) 2.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) to - 92 to - 251 to - 252 4.5 50 w derating factor above 25 o c 0.036 0.4 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 275 o c thermal characteristics symbol parameter value unit to - 92 to - 251 to - 252 r thjc thermal resistance, junction to case - 2.5 o c/w r thjl thermal resistance, junction to lead max 27.7 - o c/w r thja thermal resistance, junction to ambient 150 120 o c /w bv dss : 600v i d : 1.0a r ds(on) : 9.0ohm 1 2 3 SW1N60C 1 2 3 1 2 3 1. gate 2. drain 3. source to - 251 1 2 3 to - 252 to - 92 item sales type marking package packaging 1 sw c 1n60c SW1N60C to - 92 tape 2 sw i 1n60c SW1N60C to - 251 tube 3 sw d 1n60c SW1N60C to - 252 reel order codes *. drain current is limited by junction temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 2 /5 samwin electrical characteristic ( t c = 25 o c unless otherwise specified symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.58 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - - - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 0.5a - 7.3 9 ? g fs forward transconductance vds = 40 v, id = 0.5a 0.5 - - s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz - 120 150 pf c oss output capacitance - 18 25 c rss reverse transfer capacitance - 4 6 t d(on) turn on delay time v ds =300v, i d =1.0a, r g =25 ? (note 4,5) - 4.6 30 ns tr rising time - 20 100 t d(off) turn off delay time - 18 60 t f fall time - 24 60 q g total gate charge v ds =480v, v gs =10v, i d =1.0a (note 4,5) - 5.6 10 nc q gs gate - source charge - 1.2 - q gd gate - drain charge - 1.9 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 1 a i sm pulsed source current - - 4 a v sd diode forward voltage drop. i s =1a, v gs =0v - - 1.5 v t rr reverse recovery time i s =1a, v gs =0v, di f /dt=100a/us - 323 - ns q rr breakdown voltage charge - 908 - nc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 80mh, i as = 1a, v dd = 50v, r g =25 ?, starting t j = 25 o c 3. i sd 1.0a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW1N60C
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 3 /5 samwin fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics SW1N60C 0 2 4 6 8 10 12 0 1 2 3 4 5 6 vgs gate source voltage(v ) qg, total gate charge (nc) vds=480v notes: 1. 250s pulse test 2. t=25 3. vgs 2~10v step=1v vgs=20v vgs=10v fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature 150 25 0.8 0.9 1 1.1 1.2 - 70 - 45 - 20 5 30 55 80 105 130 155 180 bvdss, (normalized drain - source breakdown voltage tj junction temperature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 70 - 45 - 20 5 30 55 80 105 130 155 180 rdson, (normalized drain - source on resistance tj junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 4 /5 samwin SW1N60C fig. 7. maximum safe operating area fig. 8. transient thermal response curve v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9. gate charge test circuit & waveform fig. 10. switching time test circuit & waveform v ds same type as dut dut v gs 0.2ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 5 /5 samwin fig. 11. unclamped inductive switching test circuit & waveform SW1N60C fig. 12. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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